4.4 kV ?-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>?2</sup>
نویسندگان
چکیده
Abstract ? -Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages ( V BR ) and ON currents I DMAX ). A sandwiched SiN x dielectric field plate design is utilized that prevents etching-related damage in the active region a deep mesa-etching was used to reduce leakage. The device L GD = 34.5 ? m exhibits an of 56 mA mm ?1 , high / OFF ratio >10 8 very low leakage until catastrophic at ?4.4 kV. power figure merit (PFOM) 132 MW cm ?2 calculated for reported results first >4 kV class Ga surpass theoretical unipolar FOM silicon.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2022
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/ac6729